4H-N Silicon Carbide SiC Substrate 8 inch Thickness 350um 500um P grade D grade SiC wafer

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrtge, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type

Character of 4H-N SiC

- use SIC Monocrystal to make

- support customized ones with design artwork

- high performance, Wide Bandgap, High Electron Mobility

- High Hardness, about 9.2 Mohs

- widely used in high-tech areas, like power electronics, LEDs and sensors

Silicon carbide (SiC) wafers, composed of silicon and carbon, are a crucial semiconductor material utilized in various applications.

Known for their distinctive electrical and thermal properties, SiC wafers play an essential role in the semiconductor industry.

They are especially advantageous in high-temperature environments and offer several benefits over conventional silicon wafers.

*Product specification sheet is below.

More details of 4H-N SiC

The silicon carbide (SiC) industrial chain consists of several key stages: substrate material preparation, epitaxial layer growth, device manufacturing, and downstream applications.

SiC monocrystals are typically produced using the physical vapour transmission (PVT) method.

These crystals then serve as substrates for the chemical vapour deposition (CVD) process, which creates epitaxial layers.

These layers are subsequently used to manufacture various devices.

In the SiC device industry, the majority of the value is concentrated in the upstream substrate manufacturing stage due to its technical complexity.

ZMSH company offers SiC wafers in sizes 2inch, 4inch, 6inch, 8inch and 12inch.

Due to its exceptional hardness (SiC is the second hardest material globally) and stability under high temperatures and voltage,

SiC is extensively utilized across multiple industries.

Samples

*As well, we can customize if you have further requirements.

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FAQ

1. Q: How does 4H-N SiC compare to silicon?

     A: 4H-N SiC has a wider bandgap, higher thermal conductivity, and better breakdown voltage compared to silicon.

2. Q: What is the future outlook for 4H-N SiC technology?

     A: The future outlook for 4H-N SiC technology is promising, with increasing demand in power electronics, renewable energy, and advanced electronic systems.