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| 브랜드 이름: | ZMSH |
| MOQ: | 10 |
| 배달 시간: | 2~4주 |
| 지불 조건: | 티/티 |
The High-Purity Single Crystal Silicon Electrode is a semiconductor-grade plasma chamber component designed for use in advanced etching, deposition, and surface modification equipment. Manufactured from ultra-clean single crystal silicon (5N purity), it provides stable electrical performance, excellent plasma compatibility, and precise gas/electric field control in critical semiconductor processes.
As a core consumable inside plasma reactors, silicon electrodes directly influence plasma density, uniformity, and wafer process consistency. Their material compatibility with silicon-based manufacturing environments also helps minimize cross-contamination risk, making them a widely adopted standard in semiconductor fabs.
In semiconductor plasma equipment (ICP, RIE, PECVD, CVD), silicon electrodes function as:
During operation, electrodes are continuously exposed to:
Over time, controlled material erosion occurs, making silicon electrodes a critical consumable part in semiconductor manufacturing systems.
Produced from 5N high-purity single crystal silicon, ensuring:
Silicon electrodes exhibit stable behavior in plasma environments, helping:
Different resistivity grades allow process optimization for:
Customizable hole patterns enable:
High-precision fabrication ensures:
| Parameter | Specification |
|---|---|
| Material | Single Crystal Silicon |
| Purity | ≥ 99.999% (5N) |
| Max Diameter | Up to 480 mm |
| Thickness | Custom (5–50 mm) |
| Resistivity (Low) | < 0.02 Ω·cm |
| Resistivity (Medium) | 1 – 4 Ω·cm |
| Resistivity (High) | 70 – 90 Ω·cm |
| Resistivity Uniformity | < 5% (RRG) |
| Gas Hole Diameter | 0.2 – 0.8 mm (customizable) |
| Surface Finish | Polished / Lapped / Ground |
| Surface Roughness | Ra ≤ 0.8 μm (polished lower) |
| Machining Accuracy | < 10 μm |
| Flatness | ≤ 30 μm (size dependent) |
| Edge Design | Custom chamfer / radius |
| Quality Standard | No cracks, chips, or contamination |
Silicon electrodes are widely used in:
They are suitable for both mature semiconductor nodes and standard high-volume manufacturing environments.
| Feature | Silicon Electrode | SiC Electrode |
|---|---|---|
| Cost | Lower | Higher |
| Machinability | Excellent | More difficult |
| Plasma Resistance | Moderate | High |
| Lifetime | Medium | Long |
| Process Compatibility | Excellent (Si-based fabs) | Excellent (harsh environments) |
| Best Use Case | Standard processes | High-end / aggressive plasma |
Silicon electrodes are often preferred when cost efficiency and silicon-process compatibility are primary considerations.
Silicon electrodes remain widely used because they offer:
For applications requiring extreme plasma resistance or extended lifetime, SiC-based solutions may be considered instead.
Available customization includes:
Yes. It is a critical consumable in plasma systems and gradually wears under ion bombardment and chemical exposure.
Low resistivity is used for higher conductivity applications, while high resistivity is used for better electrical control and insulation in plasma environments.
Yes. All dimensions, resistivity levels, gas distribution patterns, and surface finishes can be customized according to equipment requirements.
Silicon electrodes are more cost-effective, easier to machine, and highly compatible with silicon-based semiconductor processes.
