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4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

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4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

큰 이미지 : 4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

제품 상세 정보:

원래 장소:	중국
브랜드 이름:	ZMSH
인증:	rohs
모델 번호:	4H 6 인치 SIC 에피 택셜 웨이퍼

결제 및 배송 조건:

최소 주문 수량:	5
가격:	by case
포장 세부 사항:	100 학년 청소실에 패키지
배달 시간:	2-4 주
지불 조건:	t/t

상세 제품 설명

크기:	6 인치	두께:	200-300 음
재료:	4H-SiC	도전성 타입:	N- 타입 (질소로 도핑)
저항:	어느	TTV:	≤ 10 um
활 / 날실:	≤ 20 µm	포장:	봉인하여서 진공청소기로 청소하세요
강조하다:	6inch SiC epitaxial wafer , SiC wafer for UHV MOS device , 100μm SiC substrate with warranty

SiC Epi Wafer Overview

4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal substrate via chemical vapor deposition (CVD). Its unique crystal structure and electrical characteristics make it an ideal substrate for ultra-high voltage (UHV, >10 kV) metal-oxide-semiconductor field-effect transistors (MOSFETs), junction barrier Schottky diodes (JBS), and other power devices. This product offers three epitaxial layer thicknesses (100μm, 200μm, 300μm) to address applications ranging from low-voltage to UHV scenarios, suitable for new energy vehicles (NEVs), industrial power systems, and smart grid technologies.

SiC epitaxial wafer Characteristic

1. High Breakdown Voltage & Low On-Resistance

Achieves balanced breakdown voltage (BV) and specific on-resistance (R<sub>sp</sub>) via deep doping pillar structures (alternating n-type and p-type columns). For example, 5 kV-class SJ MOSFETs exhibit R<sub>sp</sub> as low as 9.5 mΩ·cm² at room temperature, rising to 25 mΩ·cm² at 200°C.
Adjustable epitaxial layer thickness and doping concentration (e.g., 100μm layer for 3.3 kV devices, 300μm layer supporting >15 kV applications).

2. Exceptional Thermal Stability & Reliability

Leverages high thermal conductivity (4.9 W/cm·K) and wide bandgap (3.2 eV) to operate stably above 200°C, minimizing thermal management complexity.
Employs ultra-high energy ion implantation (UHEI) (up to 20 MeV) to reduce lattice damage, combined with 1700°C annealing to repair defects, achieving leakage current density < 0.1 mA/cm².

3. Low Defect Density & High Uniformity

Optimized growth parameters (C/Si ratio, HCl doping strategy) yield surface roughness (RMS) of 0.4–0.8 nm and macro-defect density < 1 cm⁻².
Doping uniformity (CV testing) ensures standard deviation < 15%, guaranteeing batch consistency.

4. Compatibility with Advanced Fabrication Processes

Supports trench filling and deep doping pillar architectures, enabling lateral depletion designs for UHV MOSFETs with breakdown voltages exceeding 20 kV.

4H-SiC Epitaxial Wafer Applications

1.Ultra-High Voltage Power Devices

New Energy Vehicles (NEVs): Main drive inverters and onboard chargers (OBC) for 800V platforms, enhancing efficiency by 10–15% and enabling fast charging.
Industrial Power Systems: High-frequency switching (MHz range) in photovoltaic inverters and solid-state transformers (SSTs), reducing losses by >30%.

2.Smart Grids & Energy Storage

Grid-forming energy storage PCS for weak-grid stabilization.
High-voltage DC transmission (HVDC) and smart distribution equipment, achieving >99% energy conversion efficiency.

3.Rail Transit & Aerospace

Traction inverters and auxiliary power systems for extreme temperatures (-60°C to 200°C) and vibration resistance.

4.Research & High-Tech Manufacturing

Core material for ultra-heavy element (e.g., Nh) detectors, enabling high-temperature (300°C) α-particle detection with energy resolution < 3%.

4H-SiC Epitaxial Wafer parameters

Parameter	Specification / Value
Size	6 inch
Material	4H-SiC
Conductivity Type	N-type (doped with Nitrogen)
Resistivity	ANY
Off-Axis Angle	4°±0.5° off (typically toward [11-20] direction)
Crystal Orientation	(0001) Si-face
Thickness	200-300 um
Surface Finish Front	CMP polished (epi-ready)
Surface Finish Back	lapped or polished (fastest option)
TTV	≤ 10 µm
BOW/Warp	≤ 20 µm
Packaging	vacuum sealed
QTY	5 pcs

More samples of SiC Wafers

*We accept customized one, please feel free to contact us about your requirements.

Recommended SiC Products

1. 8inch SiC Epitaxial Wafer Diameter 200mm Thickness 500μm 4H-N Type

2. CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch Epitaxy Thickness 2.5-120 Um For Electronic Power

SiC Epi Wafer FAQ

1. Q: What is the typical thickness range for 6-inch 4H-SiC epitaxial wafers?

A: The typical thickness ranges from 100–500 μm to support ultra-high-voltage (≥10 kV) MOSFET applications, balancing breakdown voltage and thermal management.

2. Q: What industries use 6-inch 4H-SiC epitaxial wafers?

A: They are critical for smart grids, EV inverters, industrial power systems, and aerospace, enabling high efficiency and reliability in extreme conditions.

Tags: #6inch, #Custom, #4H-SiC Epitaxial Wafer, #4H-N Type, #100μm/200μm/300μm, #Ultra-High Voltage (UHV), #MOS Device, #SiC Crystal, #Silicon Carbide Substrate, #100-500μm

태그:

담당자: Mr. Wang

전화 번호: +8615801942596

기타 제품

6인치 초고전압 SiC 에피택셜 웨이퍼 100–500 µm (MOSFET 장치용)

재료: 4H-SiC

두께: 200-300um

도전성 타입: N- 타입 (질소로 도핑)

저항: 어느

맞춤형 사각 광학 윈도우 그린 모이사나이트 SiC 결정 고경도

크기/모양: 사용자 정의

재료: SiC 크리스털

두께 전형적인 범위: 0.5mm – 3mm

광학 전송 범위: 0.4 μm - 5.5 μm

4인치 6인치 8인치 SICOI 웨이퍼 4H-SiC 온 인슐레이터 100~150 mm sic 필름 ON 실리콘

Size: 4inch/6inch/8inch

Surface Roughness: Ra<0.5nm

Fracture Toughness: 3.5 MPa·m¹/²

CTE (4H-SiC): 4.2×10⁻⁶/K

2인치 4인치 6인치 8인치 5x5 mm 10x10 mm 4H-SiC 기판 3C-N 타입 MOS 등급

크기: 2 인치, 4 인치, 6 인치, 5 × 5,10 × 10

유전 상수: 9.7

표면 경도: HV0.3> 2500

밀도: 3.21 g/cm3

3C-SiC 기판 N형 제품 등급, 5G 통신용

크기: 2 인치, 4 인치, 6 인치, 5 × 5,10 × 10

유전 상수: 9.7

표면 경도: HV0.3> 2500

밀도: 3.21 g/cm3