logo
좋은 가격  온라인으로

제품 세부 정보

Created with Pixso. Created with Pixso. 제품 Created with Pixso.
세라믹 기질
Created with Pixso. ​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

브랜드 이름: ZMSH
모델 번호: 본딩-특이 적 SIC 진공 척
MOQ: 5
가격: by case
배달 시간: 2-4 주
지불 조건: t/t
자세한 정보
원래 장소:
중국
인증:
rohs
재료 순도:
sic ≥ 99.999%
열 팽창 계수:
~ 4.5 × 10/℃
탄성 계수:
> 400 GPA
표면 평탄도:
≤1 μm
표면 거칠기 (RA):
≤0.01 μm
흡착 홈 정확도:
± 5 μm
포장 세부 사항:
100 학년 청소실에 패키지
제품 설명

​​Bonding-Specific SiC Vacuum Chuck​ Brief

 

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​

 

 

 

​​​​A Bonding-Specific Silicon Carbide (SiC) Vacuum Chuck is a high-performance ceramic adsorption component manufactured using ​​reaction sintering or chemical vapor deposition (CVD) processes​​, specifically designed for ​​semiconductor chip bonding processes​​. Its core function is to ​​stably adsorb and secure wafers​​ during bonding via ​​vacuum negative pressure or electrostatic adsorption principles​​, ensuring ​​micrometer or even sub-micrometer-level precise alignment and interconnection​​ between chips and substrates or interposers under high-temperature and pressurized conditions. It employs ​​ultra-high-purity silicon carbide ceramic​​ as the base material, utilizing ​​precisely engineered porous structures or surface electrode designs​​ to provide uniform adsorption force during bonding, preventing wafer slippage or deformation.

 

 


 

Key Performance Parameters

 
 
​​Parameter Category​​ ​​Parameter Name​​ ​​Typical Value/Range​​
​​Material Characteristics​​ Material Purity SiC ≥ 99.999%
Coefficient of Thermal Expansion ~4.5×10⁻⁶/℃
Thermal Conductivity ~120 W/(m·K) (room temperature)
Elastic Modulus >400 GPa
Bulk Density ≥3.1 g/cm³
​​Functional Characteristics​​ Surface Flatness ≤1 μm
Surface Roughness (Ra) ≤0.01 μm
Adsorption Groove Accuracy ±5 μm
Operating Temperature Room temperature~400°C (electrostatic type)
 

 


 

​​Bonding-Specific SiC Vacuum Chuck Features

 
 
  1. ​​Precision Air Channel Machining​​
  2. ​​Mirror Polishing​​ (or ​​Mirror Finish​​)
  3. ​​Ultra-Low Coefficient of Thermal Expansion​​ (Ultra-Low CTE)
  4. ​​High Stiffness​​
  5. ​​High Compactness​​
  6. ​​Surface Flatness and Parallelness up to 1 Micrometer​​ (Surface Flatness & Parallelism ≤1 μm)

 

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 0​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 1

 

 


 

Bonding-Specific SiC Vacuum Chuck Applications

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 2

Bonding-specific SiC vacuum chucks are primarily used in the following high-end manufacturing scenarios:

 

  • ​​Semiconductor Advanced Packaging​​: Used in ​​chip-to-wafer (C2W) or wafer-to-wafer (W2W) bonding​​ (e.g., Cu-Cu thermocompression bonding, hybrid bonding), supporting high-precision stacking in 3D IC and SiP packaging.
  • ​​MEMS Sensor Packaging​​: Provides high-temperature (≤400°C) adsorption and insulation support in ​​vacuum bonding or anodic bonding​​ for microelectromechanical systems, avoiding damage to sensitive structures.
  • ​​Power Device Interconnection​​: Used in ​​silver sintering or transient liquid phase (TLP) bonding​​ for SiC or GaN power modules, withstanding high temperatures while maintaining thermo-mechanical stability.
  • ​​Photonic Integration and Display Driving​​: Supports ​​Micro-LED mass transfer​​ or glass-silicon interposer bonding, achieving micrometer-level pick-and-place accuracy (±1μm).

 

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 3

 

 


 

Recommendation for Customized SiC Ceramics Components

 

 

1. SiC Ceramic Vacuum Chuck ​​Flip-Chip Bonding Mirror Polishing High-Stiffness​​

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 4

 

 

 

2. Customized SiC Ceramic Guide Rail Zero-Wear Corrosion-Resistant High-Speed​​

 

​​Bonding-Specific SiC Vacuum Chuck Wafer Adsorption Surface Flatness ≤1μm​​ 5

 

 


 

Bonding-Specific SiC Vacuum Chuck FAQ

 

 

Q1: Why choose a silicon carbide (SiC) vacuum chuck for bonding processes?​​

​​A1:​​ SiC vacuum chucks are chosen for their ​​exceptional thermal stability, ultra-low thermal expansion, and high stiffness​​, which ensure ​​micron-level alignment accuracy​​ and ​​prevent wafer deformation​​ during high-temperature bonding.

 

 

​​Q2: What are the primary applications of SiC vacuum chucks in semiconductor manufacturing?​​

​​A2:​​ They are primarily used in ​​advanced semiconductor packaging​​ processes such as ​​chip-to-wafer (C2W) and wafer-to-wafer (W2W) bonding​​, ​​MEMS sensor encapsulation​​, and ​​power device interconnection​​ (e.g., SiC/GaN module sintering), where ​​high temperature, precision alignment, and contamination control​​ are critical.

 

 


Tags: #Bonding-Specific SiC Vacuum Chuck, #Customized, #Wafer Adsorption, #Surface Flatness ≤1μm​​

   
​​ 
​​